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MITSUBISHI
M61089FP
PREAMPLIFIER WITH PHOTODETECTOR FOR OPTICAL PICKUP
DESCRIPTION
The M61089FP is a semiconductor integrated circuit developed for CD-ROM (24 times speed) . The IC is housed in a 10-pin clear molded plastic package and contains 6 preamplifiers with divided photodetectors.
FEATURES * Built-in 6 divided photodetectors * Using small package (5.0 X4.0 X1.5mm) * For three beam technique * High Band preamplifier circuit (DC-28MHz) * For infrared laser diode (ex. =780 nm) APPLIICATION CD-ROM etc. RECOMMENDED OPERATING CONDITIONS Supply voltage range ************ 3.3V to 5.5V Rated supply voltage ************ 5.0V BLOCK DIAGRAM
PIN CONFIGURATION
DOUT AOUT TEST BOUT COUT
1 2 3 4 5
Outline 10C2F
10 9 8 7 6
FOUT Vcc Vc GND EOUT
DOUT
1
D
F
10 FOUT
9 Vcc
AOUT
2 3
A
TEST
8 Vc
BOUT 4
B
7 GND
COUT 5
C
E
6 EOUT
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MITSUBISHI
M61089FP
PREAMPLIFIER WITH PHOTODETECTOR FOR OPTICAL PICKUP
ABSOLUTE MAXIMUM RATINGS (Ta=25C , unless otherwise noted) Symbol Vcc Pd Topr Tstg Parameter Supply voltage Power dissipation (Ta25C) Operating temperature Storage temperature Rating 6.0 250 -20 to +70 -40 to +100 Unit V mW C C
8p
8p
1
10K 8p
10
300
10K
THERMAL DERATING (MAXIMUM RATINGS)
250
2
10K
9
200 150 100 50
0.1
3
8
8p
0.1
4
10K 8p
7
0 0
70
25
50
75
100
125
AMBIENT TEMPERATURE Ta (C)
8p
5
10K
6
10K
Units Resistance Capacitance
: :F
*Please set the condenser connected to Vcc and Vc near the pin. (Within 10mm)
MITSUBISHI ELECTRIC
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MITSUBISHI
M61089FP
PREAMPLIFIER WITH PHOTODETECTOR FOR OPTICAL PICKUP
ELECTRIACAL CHARACTERISTIC Parameter Symbol
(Vcc=5.0V , Vc=2.5V , Ta=25C, unless otherwise noted)
Test condition Min
Limits Unit Typ 6.0 300 530 1.76 0 Max 7.2 360 640 2.14 +15 mA mV mV times mV 4.8
Circuit current
Icc
In the dark Po=10W =780nm =780nm Output A to D Output E to F
240 420 1.40 -15
Output voltage
Vo
Po=10W
Output voltage ratio Output offset voltage
VOE/VOA V
OFF
The ratio of output E to F toward output A to D
In the dark
output A to F
In the dark (A+B) - (C+D) Delta output offset voltage
V
OFF
In the dark (A+D) - (B+C) In the dark E - F
-15
0
+15
mV
Frequency
fc
characteristic Output noise voltage
Po=10W =780nm 3dB down Output A to D Po=10W =780nm 3dB down Output E to F Output A to D (at f=20MHz)
25 1.0 -
28 1.5 -80
MHz -74 dBm
V NO
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MITSUBISHI
M61089FP
PREAMPLIFIER WITH PHOTODETECTOR FOR OPTICAL PICKUP
PD SIZE (TYPICAL)
22 124 88 66
22 124
D
6
C E
F
5
A
5 6
B
Unit : m
10
9
8
7
6
Note )
A public difference from the SPD center and the flame + 0.2mm A public difference from the center of the flame of molded package + 0.2mm A public difference from the center of SPD and the center of molded package + 0.4mm The rotation deviation of SPD toward the flame + 3 degree
DC
F
AB
E
1
2
3
4
5
MITSUBISHI ELECTRIC
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MITSUBISHI
M61089FP
PREAMPLIFIER WITH PHOTODETECTOR FOR OPTICAL PICKUP
Note regarding these materials
* These materials are intended as reference to assist our customers in the selection of the Mitsubishi semiconductor product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Mitsubishi Electric Corporation or a third party. * Mitsubishi Electric Corporation assumes no responsibility for any damage, or infringement of any third-party's right,originating in the use of any product data, diagrams, charts of circuit application examples contained in these materials. * All information contained in these materials, including product data, diagrams and charts, represent information on products at the time of publication of these materials, and are subject to change by Mitsubishi Electric Corporation without notice due to product improvements or other reasons. It is therefore recommended that customers contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for the latest product information before purchasing a product listed herein. * Mitsubishi Electric Corporation semiconductors are not designed or manufactured for use in a device or system that is used under circumstances in which human life is potentially at stake. Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor when considering the use of a product contained herein for special applications, such as apparatus or systems for transportation, vehicular, medical, aerospace, nuclear repeater use. * The prior written approval of Mitsubishi Electric Corporation is necessary to reprint or reproduce in whole or in part these materials. * If these products or technologies are subject to the Japanese export control restrictions, they must be exported under license from the Japanese government and cannot be imported into a country other than the approved destination. Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the country of destination is prohibited. * Please contact Mitsubishi Electric Corporation or an authorized Mitsubishi Semiconductor product distributor for further details on these materials or the products contained therein.
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